Download Advances in Imaging and Electron Physics, Volume 183 by Peter W. Hawkes PDF

By Peter W. Hawkes

Advances in Imaging & Electron Physics merges long-running serials-Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The sequence good points prolonged articles at the physics of electron units (especially semiconductor devices), particle optics at low and high energies, microlithography, snapshot technological know-how and electronic photograph processing, electromagnetic wave propagation, electron microscopy, and the computing tools utilized in some of these domains.

  • Contributions from best specialists
  • Informs and updates on all of the most modern advancements within the field

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Extra info for Advances in Imaging and Electron Physics, Volume 183

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Such contamination layers may need to be removed in order to quantify the nanoparticle composition and to excite these features sufficiently, particularly with low-energy incident electron beams. Hence, Ar ion bombardment may become a requirement in future SEMs. 11. AUGER ELECTRON SPECTROSCOPY EXPERIMENTS IN SEM Although Auger electron spectroscopy (AES) was first announced by Harris (1968) in an SEM, it was immediately realized that the vacuum environment in the SEM was indeed the wrong one to use.

The SDD has changed this situation; it opens the way to nanoscale characterization in the SEM. Samples are frequently covered by a layer of unknown contamination in the SEM. This typically consists of carbon and oxygen compounds deposited on the surface while the sample was in the air, or from cracked hydrocarbons from the pump oil. Such contamination layers may need to be removed in order to quantify the nanoparticle composition and to excite these features sufficiently, particularly with low-energy incident electron beams.

Function of the evaporated film with respect to that of the material being imaged, one would still obtain a different SE yield from the two regions. The authors claim that this is due to the establishment of either a Schottky or an ohmic contact between the metal film and the semiconductor, which would give rise to a different SE yield. The authors demonstrated this model by reversing the contrast obtained for a given p-n junction when depositing a metallic film of a different work function that is either higher or lower than that used in the first experiment.

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